Emcore, Sumitomo to develop and produce InGaP wafers for HBT devices

17 Jun 2002

Emcore Corporation (Somerset, New Jersey) and Sumitomo Electric Industries, Ltd. (Hyogo, Japan) have signed a long-term agreement for the joint development and production of indium gallium phosphide (InGaP) epitaxial wafers for use as heterojunction bipolar transistor (HBT) devices for digital wireless and cellular applications. The wafers will be produced at Emcore's Somerset foundry and Sumitomo will market the new HBT materials in Japan.