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17 Jun 2002
Murray Hill, N.J. -- A group of Bell Laboratories scientists have developed a 193-nanometer single-layer photoresist that will support the manufacture of integrated circuits with features just 0.13 microns wide.
"We believe we have developed the first 193-nm resist that can be employed using current manufacturing technologies to support the microelectronics industry's move toward smaller and smaller design rules," explained Elsa Reichmanis, one of the authors. "The resist can support 0.18- and 0.15-micron design rules, and with additional development, the resist will support 0.13-micron design rules," said Reichmanis.
"Resists formulated using cycloolefins as the key building block are compatible with 0.262 N tetramethylammonium developers, have excellent adhesion, sensitivity, etch resistance, and thermal flow properties," they reported. In addition, they said, "Based on the results, high contrast formulations were evaluated on a 193-nm ISI microstepper and were shown to exhibit 0.16-microm L/S pair resolution with excellent photosensitivity."
The industry generally is expected to be using 193-nm resists to make devices in a research and development environment by 1998, and to move the technology into manufacturing by the year 2000.
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