Optics.org
daily coverage of the optics & photonics industry and the markets that it serves
Featured Showcases
Photonics West Showcase
Optics+Photonics Showcase
Menu
Historical Archive

Carbon nanotubes emit in the IR

06 May 2003

IBM researchers create an ultrasmall solid-state light source that emits infrared light at communication wavelengths.

Scientists at IBM Research in the US have obtained light from a carbon nanotube by passing a current through it. Phaedon Avouris and co-workers say that the device could be used to fabricate ultrasmall optoelectronics devices for applications in high-speed communications (Science 300 783).

Light-emitting devices rely on charge carriers - electrons and holes - being brought together so that they can recombine to emit photons. Single-walled carbon nanotubes have been used as field-effect transistors (FET) before and now the IBM team has succeeded in obtaining light from them. Previous nanotubes have only emitted light when excited by another light source such as a laser.

Avouris and colleagues used single nanotubes to make a three-terminal FET device. They randomly dispersed the nanotubes - each about 1.4 nanometres in diameter - onto a silicon substrate that contained a 150-nanometre silicon dioxide layer.

'Source' and 'drain' contacts were added then at either end of the device so that electrons and holes could be injected (figure 1). The electrons and holes recombined in the nanotube to emit infrared radiation at wavelengths longer than about 0.8 microns. This included light at a wavelength of 1.5 micrometres, which is widely used in fiber-optic communications (figure 2).

The device does not rely on doping to create charge carriers, as silicon transistors do, but is 'biased' so that one part of the nanotube conducts electrons while the other conducts holes. This is achieved by the formation of Schottky barriers - potential barriers that electrons can tunnel through - at the source and drain.

The wavelength of the emission is determined by the band gap of the nanotube, which depends on the diameter of the nanotube. Changing the thickness of the silicon dioxide layer and using other materials to construct the device might improve the overall efficiency according to the IBM team.

Author
Belle Dumé is Science Writer at PhysicsWeb

LaCroix Precision OpticsOptikos Corporation Sacher Lasertechnik GmbHCHROMA TECHNOLOGY CORP.Changchun Jiu Tian  Optoelectric Co.,Ltd.Omicron-Laserage Laserprodukte GmbHAlluxa
© 2024 SPIE Europe
Top of Page