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InAs/InAsSb Photovoltaic Detectors

16 Sep 2021

Photovoltaic detectors (photodiodes) in which the semiconductor layer is made of InAs or InAsSb materials. Absorbed photons produce charge carriers that are collected at the ciodes have complex current voltage characteristics. The devices can operate either at flicker-free zero bias or with reverse voltage. These detectors are cadmium and mercury-free. As a result, the detectors comply with the RoHS directive and can be used in the consumer market.

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Vigo System
Poznańska 129/133
Ożarów Mazowiecki
5270207340
05-850
Poland
Tel: +48 22 733 54 10
Fax: + 48 22 6652155
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