H5 Series - Manufactured with a Silicon or InGaAs APD

05 Nov 2019

The characteristics of an APD are often restricted by the transimpedance amplifier which needs to be chosen in such a way that the S/N ratio is optimised. LASER COMPONENTS can offer its customers a complete solution with the preamplifier matched to the APD. From our development and manufacturing facility in Arizona we deliver these robust industrial detectors to our global customer base.

Depending on the wavelength region of interest, the H5 Series can be manufactured with either a silicon or InGaAs APD and is housed in a hermetically sealed, 5 pin TO-46 or 6 pin TO-5 package.

The InGaAs APD chips have active element diameters of 80, 200 and 350 microns covering the wavelength range 900-1700nm and offer bandwidths of 20kHz to 700MHZ and a differential output. The internal electric field within the APD generates a large photocurrent and this combined with the performance of the amplifier generates a large responsivity, typically 0.042MV/W at 1550nm.

The devices are used extensively in high speed, low light level applications such as laser range finding, LiDAR and spectroscopy.

We can also supply the receiver with a high voltage module to bias the APD, recommending either the ABC550-04 or dBC series.

More Information https://www.lasercomponents.com/uk/product/apd-receivers/