13 Oct 2009 Our sapphire substrate can be used as the substrate for the growth of III-V compounds such as GAN for LED's. Crystal materials: 99,996% of Al2O3, High Purity, Monocrystalline
Crystal quality: Block marks, twins, Color, micro-bubbles and dispersal centers are non-existent
Diameter: 2inch-7inch
Thickness: 250±15 µm, 330±15 µm, 430±15 µm, 500±15 µm, 550±15 µm, 600±15 µm
Orientation: C-plane(0001), M-plane, A-plane, R-plane
Primary flat length: 16.0±0.8 mm, 22.0±1.0mm, 32.5±1.5mm
TTV≤10 µm , ≤15µm, ≤20µm , ≤30µm
BOW≤10 µm , ≤15µm, ≤20µm , ≤30µm
Warp≤10 µm , ≤15µm, ≤20µm , ≤30µm
Front Surface: Epi-polished, Ra< 0.2nm (By AFM)
Back Surface: Fine ground (Ra=0.5 to 1.2 µm) or Epi-polished (Ra< 0.2 nm)
Cleaning/packaging: Class 100 clean room cleaning, vacuum packaging derived nitrogen; 25 pieces in one cassette or single packaging. |
