08 May 2007 m2k-laser is now offering high-power diode lasers in the wavelength regime 1.9 μm to 2.1 μm. The lasers can be used for medical applications, optical pumping of mid-infrared solid-state lasers or for material processing These lasers, developed at our partner Fraunhofer Institute for Applied Solid State Physics, are now available through m2k-laser as the new GaSb_BA_xxxx series.
The broad-area, gain-guided lasers are based on the (AlGaIn)(AsSb) material system, epitaxially grown on GaSb substrates. Different variants such as single emitters or laser bars are available now. The single emitters are mounted onto c-mounts and feature output powers up to 1 W. The 10x1 mm2 laser arrays are mounted onto copper bar mounts or onto micro-channel heat-sinks employing established GaAs-based laser packaging techniques. The output power of diode laser arrays with 30% fill factor emitting at 1.908 μm wavelength achieve typically 15W in continuous-wave operation at room-temperature. The fast axis beam divergence is as low as 44° FWHM due to an improved waveguide design.
The GaSb_BA_xxxx series extends the GaSb-based laser product line of m2k-laser, which has been established last year by offering single-lateral-mode diode lasers with wavelengths between 1.9 μm and 2.5 μm for applications in spectroscopy and medical diagnostics. |
