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| One of the techniques under development within Semprius involves depositing multiple layers of GaAs with separating layers of AlAs. Patterned vertical etching then exposes the sidewalls of the semiconductor structure. Immersion in hydrofluoric acid selectively eliminates the AlAs layers, thereby releasing the layers of GaAs, and the size of the GaAs layers can range from microns to centimetres and thicknesses from several nanometers to microns. Credit: John Rogers. |
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