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Compact ultraviolet-B semiconductor laser diode emitting at 318 nm.
A Compact ultraviolet-B (UV-B) semiconductor laser diode emitting at 318 nm under continuous-wave operation at room-temperature. The device demonstrates stable UV-B lasing on a low-cost sapphire substrate, marking a key step toward practical, energy-efficient UV light sources for medical, biotechnology, and precision manufacturing applications. Credit: Prof. Motoaki Iwaya from Meijo University, Japan.
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