Optics.org
daily coverage of the optics & photonics industry and the markets that it serves
Menu

In the design, the thickness of the GaAs waveguide layers that surround the device's quantum well active region is increased. This results in 200 um stripe-width devices with an 8 mm long optical cavity. When mounted on C-mounts, these devices produced output powers of 38 W under quasi-CW operation from a single emitter.

Image Credit: Agnieska Pietrzak

Copyright © 2022 SPIE EuropeDesigned by Kestrel Web Services