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Deep ICP-RIE Etched Trenches with Sidewall Slope Control of GaAs-type High Power PLDs

29 Jan 2024

Join Thierno Mamoudou Diallo for his second presentation

As part of LASER COMPONENTS‘ presentation marathon at the SPIE LASER conference during Photonics West, Thierno-Mamoudou Diallo, Opto-Electronics and III-V Semiconductor Specialist at LASER COMPONENTS Canada, will introduce new micro-fabrication methods on January 28th at 11:30am PST.

 In his second presentation, Thierno will discuss new methods in the micro-fabrication of GaAs-based Pulsed Laser Diodes (PLDs) optimised for 905nm.  Our team at LASER COMPONENTS Canada used inductively coupled plasma-reactive ion etching (ICP-RIE) to achieve precise waveguide trench geometries with sidewall angles of 60° to 70°. Compared to conventional wet etching, this optimised process allows for a reduced device footprint and an increased yield per wafer.  It is an important step towards scalability and improved efficiency in the micro-fabrication process for advanced PLDs.

 While you are at Photonics West, remember to stop by the Laser Components Booth 1449.  We look forward to seeing you soon.  You can schedule a time to come chat with us by sending an email to info@laser-components.com and we will come back to you.

Further information Pulsed Laser Diodes (lasercomponents.com)

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