Hamamatsu adds uncooled high-speed and high-sensitivity InAsSb device (3 to 11 μm) to infrared detector line-up
30 Aug 2017
Hamamatsu Photonics K.K. has developed an uncooled InAsSb (indium arsenide antimonide) photovoltaic detector that offers high-speed and high-sensitivity detection of infrared light in the 3 to 11 micron wavelength range. This new device, part number P13894-011MA, extends the upper limit of sensitivity of Hamamatsu’s InAsSb detectors from 8 microns to 11 microns, which will enable users to measure molecules that absorb longer wavelengths of light and therefore analyse more compounds with a single device.