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Hamamatsu adds uncooled high-speed and high-sensitivity InAsSb device (3 to 11 μm) to infrared detector line-up

30 Aug 2017

Hamamatsu Photonics K.K. has developed an uncooled InAsSb (indium arsenide antimonide) photovoltaic detector that offers high-speed and high-sensitivity detection of infrared light in the 3 to 11 micron wavelength range. This new device, part number P13894-011MA, extends the upper limit of sensitivity of Hamamatsu’s InAsSb detectors from 8 microns to 11 microns, which will enable users to measure molecules that absorb longer wavelengths of light and therefore analyse more compounds with a single device.

For further information contact us by email: europe@hamamatsu.de or visit our website: www.hamamatsu.com

CONTACT DETAILS
Hamamatsu Photonics Europe GmbH
Hamamatsu Photonics Europe GmbH
Arzbergerstr. 10
Herrsching am Ammersee
Bavaria
82211
Germany
Tel: 0049 8152 375 131
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