23 May 2007 Powerlase Ltd has announced the introduction of a new high power 2kW Starlase laser to aid in semiconductor manufacture. The 2kW class laser module combined with Powerlase’s patented approach of spatial and temporal multiplexing will have a significantly positive impact on satisfying the requirements of the EUV source from a laser power point of view.
The new device firmly places the Laser produced plasma (LPP) EUV source approach as the main contender to be the source of choice for the high volume manufacturing of semiconductor chips.
The combination of a high power laser per single module with the efficiency of the diode pumped solid state laser will make the LPP approach power scaleable to satisfy the demand of the industry at a low running cost.
2kW class Starlase laser
The new Starlase laser will drive POWERLASE’s world leading research to achieve workable solutions for the high volume manufacture of semiconductor chips by 2009.
POWERLASE recently announced a significant breakthrough in the scalability of the EUVL Sources by achieving the ability to multiplex modular lasers used in EUV source generation to increase power scalability. The new laser will be used in further research offering high output power at a wavelength of 1064nm, short pulse and excellent beam properties well suited for the EUV generation. It can be multiplexed to produce the power required to revolutionise semiconductor manufacture.
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