 |
 |
 |
Date Announced: 31 Aug 2012
Canadian firm says its semiconductor technology can lower the cost of producing green LEDs and laser diodes.
Meaglow Ltd. (Privately Held) announces its low temperature Migration Enhanced Afterglow film growth technique has been used to produce a thick Indium Gallium Nitride (InGaN) layer with strong yellow emission. This recent result bodes well to increase the efficiency and lower production costs of green LEDs and laser diodes. The company is currently seeking collaboration opportunities to enhance the material properties required by industry for lighting, display, medical, and military applications among other uses.
According to Meaglow's Chief Scientist Prof. K. Scott Butcher, "It's the brightest p-n junction I've ever seen in my life, and its right in the green gap." The green gap (540-610nm) is a major unsolved obstacle towards the development of high-efficiency solid state lighting applications. LEDs produced in the green region, between red and blue, have rapidly declining efficiency.
Green and yellow in the middle of the color spectrum, known as the "green gap", is a section of the light spectrum where devices made from either nitride or phosphide are inefficient and difficult to fabricate. Meaglow's reactor overcomes these difficulties by utilizing its revolutionary patent pending hollow cathode and low temperature growth process which is capable of growing the volatile compound of Indium required to make green and yellow diodes.
Having a nitride device that emits strongly in the yellow is a monumental step forward for low temperature InGaN growth and demonstrates that the quality of InGaN produced by the proprietary Meaglow technique is pioneering the industry. Results for this test device were presented to prominent scientists in the nitride semiconductor research community at the recent ISSLED2012 conference held in Berlin, Germany.
Meaglow is now focused on commercializing its InGaN technology, and is looking for partners interested in creating next generation devices using the thick InGaN template layers. Interested parties should email science@meaglow.com.
Source: Meaglow
E-mail: sbutcher@meaglow.com
Web Site: www.meaglow.com
| © 2024 SPIE Europe |
|
