IQE presents five papers at Photonics West in San Francisco

Date Announced: 25 Jan 2012

Epiwafer foundry demonstrates latest GaSb technology advances.

Cardiff, 25 January 2012 - IQE plc (AIM: IQE.L - News), the leading global supplier of advanced semiconductor wafer products and services to the semiconductor industry, this week presented a series of invited papers on recent key developments in advanced photonic technologies at the world`s premier optoelectronics event, Photonics West.

The IQE Group established a strong presence at Photonics West with the presentation of a number of invited papers based on developments and commercialisation of advanced infrared materials:

1: Manufacturable MBE Growth Process for Sb-based Photodetector Materials on Large Diameter Substrates" (Joint paper with ASL, Analytical)
2: Manufacturing of 100mm diameter GaSb substrates for advanced space based applications (joint paper with Jet Propulsion Labs, USA)
3: Multiwafer production of epitaxy ready 4" GaSb substrates: requirements for epitaxially grown infrared detectors
4: Surface chemistry improvement of 100mm GaSb for advanced space based applications
5: Study of the valence band offsets between InAs and InAs1-xSbx alloys (joint paper with Arizona State University)

Photonics West runs from 24 to 26 January at the Moscone Convention Center in San Francisco and is expected to attract around 1,100 exhibitors and 19,000 visitors.

Source: IQE

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