ELFYS

ElFys provides light sensors with sensitivity better than anything seen before, literally catching every ray of light. The technology greatly improves any light sensing application ranging from health monitoring to analytical instrumentation and security X-ray imaging. The superior performance of ElFys photodetectors is based on an inventive combination of modern MEMS nanotechnology and atomic layer deposition. The core technologies are patented and in the possession of the company.

ElFys was founded in 2017 and is located in Espoo, Finland. The company is based on long-term research work on photo-detector technologies at Aalto University. Our core team consists of former senior researchers, engineering leaders and business professionals. The company utilizes the state-of-the-art processing facilities at Micronova Nanofabrication Center in Espoo, Finland: 2600 square meters of CMOS compatible facilities suitable for both R&D and semi-mass production. For high-volume mass production, ElFys has partnered with an external, European foundry.

About ElFys' patented technology

Most light sensing technologies capture about two thirds of light rays, whereas ElFys’ technology can capture all of them. The Black Silicon Induced Junction Photodiode provides superior sensitivity over a wide spectral range, especially in the ultraviolet, as well as an ultra-wide viewing angle. The increased sensitivity provides improvement potential to any applications where light needs to be measured.