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Figure 1
(a) Schematic of a single top-emitting VCSEL device (not to scale). Current and mode confinement are achieved through selective oxidation of an aluminium-rich layer. The light emits in a circular, low-diverging beam, perpendicular to the epitaxial layers. (b) Schematic of an edge-emitting laser structure (not to scale). The light emits parallel to the epitaxial layers in an elliptical beam. Credit: Princeton Optronics.
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