Optics.org
daily coverage of the optics & photonics industry and the markets that it serves
Menu
Non-polar GaN LED
Unlike conventional GaN-based LEDs, the non-polar structure developed by the Santa Barbara team does not suffer from strong polarization fields in the crystal lattice, which degrade output efficiency and cause the device's peak wavelength to drift when the applied drive current changes. This device produced 250 mW at a peak wavelength of 402 nm when driven in pulsed mode. Credit: UCSB.
© 2022 SPIE Europe
Top of Page