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Non-polar GaN LED
Unlike conventional GaN-based LEDs, the non-polar structure developed by the Santa Barbara team does not suffer from strong polarization fields in the crystal lattice, which degrade output efficiency and cause the device's peak wavelength to drift when the applied drive current changes. This device produced 250 mW at a peak wavelength of 402 nm when driven in pulsed mode. Credit: UCSB.
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