22 May 2019 Description
Nd-doped YVO4 crystal is an excellent laser crystal for making the diode-pumped solid lasers. The main and greatest advantages of Nd: YVO4 are high absorption coefficient, big stimulated emission cross-section and wide absorption band, the absorption peak is about 808 nm. Because of these advantages, small crystal can be used to make smaller laser device. The another feature of Nd: YVO4crystal is this uniaxial, which makes it emit linearly polarized lights. Combining with frequency-doubled crystal, all-solid-state lasers with green, blue and red wavelength can be realized.
Parameter
Material and Specifications
| Materials |
Nd: YVO4 |
| Concentration Tolerance (atm%) |
0.5%, 1.1%, 2.0%, 3.0% |
| Orientation |
A-cut or C-cut |
| Parallelism |
20〞 |
| Perpendicularity |
5〞 |
| Surface Quality |
10/5 Scratch/Dig per MIL-O-13830 B |
| Wavefront Distortion |
<λ/8 @633nm |
| Surface Flatness |
λ/10@ 633 nm |
| Clear Aperture |
>90% |
| Chamfer |
≤0.2mm@450 |
| Dimension Tolerance |
(W±0.1mm)x(H±0.1mm)x(L+0.2/-0.1mm) (L<2.5mm) |
| (W±0.1mm)x(H±0.1mm)x(L+0.5/-0.1mm) (L≥2.5mm) |
| Angle Tolerance |
≤0.5° |
| Damage Threshold[GW/cm2 ] |
>1 for 1064nm, TEM00, 10ns, 10Hz (AR-coated) |
| Coatings |
HR@1064nm+532nm+HT@808nm/AR@1064nm+532nm |
Physical and Chemical Properties
| Crystal Structure |
Zircon Tetragonal, space group D4h-I4/amd |
| Lattice Constants |
a=b=7.12, c=6.29 |
| Density |
4.22g/cm3 |
| Melting Point |
1825 |
| Thermal Conductivity /(W·m-1·K-1@25°C) |
5.2 |
| Thermal Optical Coefficient(dn/dT) |
dno/dT=8.5×10-6/K; dne/dT=2.9×10-6/K |
| Thermal Expansion /（10-6·K-1@25°C ） |
a = 4.43, c= 11.4 |
| Hardness (Mohs) |
4~5 |
Optical and Spectral Properties
| Laser Wavelength |
1064nm, 1342nm |
| Polarized Laser Emission |
πpolarization; parallel to optic axis (c-axis) |
| Pump Wavelength |
808nm |
| Intrinsic Loss |
0.02cm-1 @1064nm |
| Diode Pumped Optical to Optical Efficiency |
>60% |
| Emission Cross Section |
25×10-19cm2@1064nm |
| Fluorescence Lifetime |
90 μs (about 50 μs for 2 atm% Nd doped) @ 808 nm |
| Gain Bandwidth |
0.96nm @1064nm |
| Refractive Index |
1.9573(no); 2.1652(ne) @1064nm |
| 1.9721(no); 2.1858(ne) @808nm |
| 2.0210(no); 2.2560(ne) @532nm |
| Absorption Coefficient |
31.4 cm-1 @ 808 nm |
| Absorption Length |
0.32 mm @ 808 nm |
| Gain Bandwidth |
0.96 nm (257 GHz) @ 1064 nm |
Absorption and Emission Spectrum
 
 
Feature
-
High absorption coefficient
-
Large stimulated emission cross-section
-
Wide absorption bang
-
High damage threshold
-
Uniaxial crystal
-
Good physical and optical property
Application
Optical Communication
Holography
Military field
Medical test
Materials processing
Laser printing |
