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Date Announced: 28 Feb 2011
Higher-power source expected to move EUV lithography a step closer to volume chip production.
Leuven, Belgium – February 28, 2011 – At today’s SPIE advanced lithography conference, Luc Van den hove, President and CEO of imec, announces during his keynote speech that imec has started the installation of ASML’s pre-production Extreme UltraViolet Lithography (EUVL) scanner, the NXE:3100, in its Leuven facility. The installation of the NXE:3100, featuring a considerably higher source power and optimized optics, underscores imec’s ambition to bring EUVL to production level.
With the installation of ASML’s NXE:3100, imec’s EUVL research program moves to the preproduction stage, shifting the focus from mainly an infrastructure study to include now also a manufacturability study. The NXE:3100 at imec uses a DPP (Discharge Produced Plasma) EUV light source from Extreme Technologies (Ushio). At comparable process conditions the NXE:3100 has recently demonstrated a throughput performance increase of a factor of 20 over the EUV Alpha Demo Tool at imec. This increase is based on increased power, higher transmission and dual stages.
Imec’s EUVL research program will tackle scanner-specific issues correlated to the difference between EUV lithography and optical lithography through the integration of 14nm logic and 2xnm and 1xnm memory processes. Research will also focus on resists that allow to optimally exploit the resolution of EUV by tackling line-edge roughness and pattern collapse, and on reticle defectivity.
“We rejoice at the acquisition of ASML’s NXE:3100 in our research facilities as the new tool will enable us to continue to offer our partners the research they need to bring EUVL to production;” said Luc Van den hove, President and CEO at imec. “Our strategic relations with equipment suppliers such as ASML allow us to offer our partners research on the most advanced equipment.”
“As reflected in some of our 28 papers at the SPIE advanced lithography conference this week, together with our partners we have achieved important progress in EUV resists and reticle defectivity;” added Kurt Ronse, director of the lithography department at imec.
Source: IMEC
E-mail: Hanne.Degans@imec.be
Web Site: www.imec.be
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