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Cree Demonstrates High Quality 150-mm Silicon Carbide Substrates

Date Announced: 30 Aug 2010

Availability of larger-size substrate material will aid development of solid-state lighting market.

DURHAM, N.C.--(BUSINESS WIRE)--Cree, Inc. (Nasdaq: CREE - News), announced today that it has achieved a major breakthrough in the development and wide scale commercialization of silicon carbide (SiC) technology with the demonstration of high quality, 150mm SiC substrates with micropipe densities of less than 10/cm2. The current Cree standard for SiC substrates is 100-mm diameter material.

SiC is a high-performance semiconductor material used in the production of a broad range of lighting, power and communication components, including light-emitting diodes (LEDs), power switching devices and RF power transistors for wireless communications. The significant size advancement of single crystal SiC substrates to 150-mm can enable cost reduction and increased throughput, while bolstering the continued growth of the SiC industry.

“Cree’s achievement of 150 mm SiC substrates further demonstrates Cree’s leadership in SiC materials technology,” said Dr. Vijay Balakrishna, Cree Materials product line manager. Steve Kelley, Cree chief operating officer, added, “We expect that 150-mm substrates can reduce device cost, boost manufacturing output and expand our product range”.

Source: Cree

Contact

Fleishman-Hillard for Cree, Inc.
Erin Grohs,
919-457-0751

E-mail: Erin.grohs@fleishman.com

Web Site: www.cree.com

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