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Novel structures from imec / ASML. Click for info.
From top left: 9.5 nm random logic structure (19 nm pitch) after pattern transfer; random vias with a 30 nm center-to-center distance with excellent pattern fidelity and critical dimension unity; 2D features at a P22 nm pitch exhibited outstanding performance; and integration of the storage node landing pad with the bit line periphery for DRAM. All images: imec / ASML.
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