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Laser spike annealing: experimental setup
Laser Spike Annealing (LSA) system at Cornell University, Ithaca, NY. Generally used for dopant activation in sub-30 nm junctions, the LSA technique is capable of heating silicon substrates up to its melting temperature within milliseconds. Laser thermal annealing is achieved using a continuous wave laser focused to a line and scanned over the surface. The surface temperature rises on time frames of microseconds to milliseconds, followed by cooling at similar rates by thermal conduction into the substrate. Credit: Cornell.
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