daily coverage of the optics & photonics industry and the markets that it serves
EUV lines: laser improves dimensions
Patterns generated under 13.5 nm EUV exposures using a) hot-plate PEB and b) laser PEB on a commercially available EUV resist. Critical dimensions were 52.1 nm and 47.8 nm for hot-plate and laser patterns respectively, with a target half pitch of 50 nm. Credit: Global Foundries.
Copyright © 2022 SPIE EuropeDesigned by Kestrel Web Services